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Model SI2305DS-T1-GE3
Description Trans MOSFET P-CH Si 8V 3.5A 3Pin SOT-23 T/R
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
2.71  yuan 2.71yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1993) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.044 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/drain source voltage (Vds):

-8.00 V

 

Technical parameters/Continuous drain current (Ids):

-3.50 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23

 

Dimensions/Packaging:

SOT-23

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2305CDS-T1-GE3 SI2305CDS-T1-GE3 Vishay Intertechnology 类似代替 SOT-23-3
VISHAY SI2305CDS-T1-GE3 晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
PDF
SI2305DS-T1 SI2305DS-T1 Vishay Siliconix 功能相似 SOT-23-3
Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
SI2305DS-T1-E3 SI2305DS-T1-E3 Vishay Semiconductor 类似代替 TO-236
MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.044Ω; ID +/-3.5A; TO-236 (SOT-23); PD 1.25W
PDF

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