Technical parameters/rated voltage (DC): | 4.30 V |
|
Technical parameters/tolerances: | ±5 % |
|
Technical parameters/rated power: | 400 mW |
|
Technical parameters/forward voltage: | 1.5V @200mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/voltage regulation value: | 4.3 V |
|
Technical parameters/forward voltage (Max): | 1.5V @200mA |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5229BTR
|
Fairchild | 类似代替 | DO-35-2 |
500mW,1N52 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
||
1N5229BTR
|
ON Semiconductor | 类似代替 | DO-35 |
500mW,1N52 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
||
|
|
ITT Corporation | 功能相似 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
|||
1N749A
|
Microsemi | 功能相似 | DO-35 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
||
1N749A
|
Fairchild | 功能相似 | DO-35-2 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
||
1N749A
|
TI | 功能相似 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
|||
1N749A-1
|
Microsemi | 功能相似 | DO-213AA-2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
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