Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/voltage regulation value: | 3.6 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Other/Product Lifecycle: | Active |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N3507A
|
Microsemi | 类似代替 | DO-35 |
齐纳稳压二极管 ZENER VOLTAGE REGULATOR DIODE
|
||
1N5227B
|
Multicomp | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
|
|
CHENG-YI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
|||
1N5227B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
1N5227B
|
Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
1N5227B(DO-35)
|
Microsemi | 功能相似 | DO-204AH |
DIODE ZENER 3.6V 0.5W(1/2W) DO35
|
||
1N5989B-TP
|
Micro Commercial Components | 功能相似 | DO-204AH |
DO-35 3.6V 0.5W(1/2W)
|
||
BZX55C3V6-TR
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
500mW,BZX55C 系列,Vishay Semiconductor 小信号齐纳二极管 超剧烈反向特性 低反向电流电平 非常高的稳定性 低噪声 符合 AEC-Q101
|
||
BZX55C3V6-TR
|
VISHAY | 功能相似 | DO-35 |
500mW,BZX55C 系列,Vishay Semiconductor 小信号齐纳二极管 超剧烈反向特性 低反向电流电平 非常高的稳定性 低噪声 符合 AEC-Q101
|
||
BZX79C3V6
|
EIC | 功能相似 | DO-35 |
齐纳二极管 500mW,BZX79C 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
||
BZX79C3V6
|
ON Semiconductor | 功能相似 | DO-35 |
齐纳二极管 500mW,BZX79C 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review