Technical parameters/forward voltage: | 1V @3A |
|
Technical parameters/reverse recovery time: | 7.5 µs |
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Technical parameters/forward current: | 3 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 100 A |
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Technical parameters/forward voltage (Max): | 1 V |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SOD-64 |
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Dimensions/Packaging: | SOD-64 |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Galaxy Semi-Conductor | 功能相似 |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
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HY Electronic | 功能相似 |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
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Secos | 功能相似 |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
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1N5407G
|
DIYI Electronic | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
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1N5407G
|
EIC | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
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1N5626
|
Vishay Intertechnology | 功能相似 |
Diode Standard Recovery Rectifier 600V 3A 2Pin SOD-64
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1N5626
|
NTE Electronics | 功能相似 |
Diode Standard Recovery Rectifier 600V 3A 2Pin SOD-64
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