Technical parameters/capacitance: | 3.30 µF |
|
Technical parameters/tolerances: | ±10 % |
|
Technical parameters/rated voltage: | 16 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Physical parameters/medium materials: | Tantalum |
|
Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D335X0010A1V1E3
|
Vishay Semiconductor | 功能相似 |
钽质电容器-固体铅 199D335X0010A1V1E3
|
|||
199D335X0016A1V1E3
|
Vishay Semiconductor | 功能相似 |
Cap Tant Solid 3.3uF 16V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ Bulk
|
|||
199D335X0016A2V1E3
|
Vishay Semiconductor | 类似代替 | Radial |
CAP TANT 3.3uF 16V 20% RADIAL
|
||
199D335X9010A2V1E3
|
Vishay Semiconductor | 类似代替 | Radial |
CAP TANT 3.3uF 10V 10% RADIAL
|
||
199D335X9016A1V1E3
|
Vishay Semiconductor | 功能相似 | Radial |
CAP TANT 3.3uF 16V 10% RADIAL
|
||
199D335X9016A1V1E3
|
Vishay Sprague | 功能相似 | 0.17 in |
CAP TANT 3.3uF 16V 10% RADIAL
|
||
199D335X9016A1V1E3
|
VISHAY | 功能相似 | Radial |
CAP TANT 3.3uF 16V 10% RADIAL
|
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