Technical parameters/capacitance: | 3.3 μF |
|
Technical parameters/tolerances: | ±20 % |
|
Technical parameters/rated voltage: | 16 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | Radial |
|
Dimensions/Packaging: | Radial |
|
Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D335X0016A1V1E3
|
Vishay Semiconductor | 功能相似 |
CAP TANT 3.3uF 16V 20% RADIAL
|
|||
199D335X9016A1V1E3
|
Vishay Semiconductor | 类似代替 | Radial |
VISHAY 199D335X9016A1V1E3 钽电容, 3.3uF, 16V, 径向引线
|
||
199D335X9016A1V1E3
|
Vishay Sprague | 类似代替 | 0.17 in |
VISHAY 199D335X9016A1V1E3 钽电容, 3.3uF, 16V, 径向引线
|
||
199D335X9016A1V1E3
|
VISHAY | 类似代替 | Radial |
VISHAY 199D335X9016A1V1E3 钽电容, 3.3uF, 16V, 径向引线
|
||
199D335X9016A2V1E3
|
Vishay Sprague | 类似代替 | Through Hole |
CAP TANT 3.3uF 16V 10% RADIAL
|
||
199D335X9016A2V1E3
|
Vishay Semiconductor | 类似代替 | Radial |
CAP TANT 3.3uF 16V 10% RADIAL
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review