Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/capacitance: | 0.1 µF |
|
Technical parameters/tolerances: | ±10 % |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/rated voltage: | 50 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Packaging parameters/pin spacing: | 2.54 mm |
|
Dimensions/Height: | 7.11 mm |
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Dimensions/Pin Spacing: | 2.54 mm |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
|
Other/Packaging Methods: | Each |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D104X0050A1V1E3
|
Vishay Semiconductor | 类似代替 | Through Hole |
CAP TANT 0.1uF 50V 20% RADIAL
|
||
199D104X9035A1V1E3
|
VISHAY | 功能相似 | Radial |
VISHAY 199D104X9035A1V1E3 钽电容, 0.1uF, 35V, 径向引线
|
||
199D104X9035A2A1E3
|
Vishay Semiconductor | 完全替代 |
Cap Tant Solid 0.1uF 35V 10% (4.4 X 7.11mm) Radial 2.54mm 125℃ Ammo Pack
|
|||
199D104X9035A2B1E3
|
Vishay Sprague | 完全替代 | Through Hole |
钽质电容器-固体铅 199D104X9035A2B1E3
|
||
199D104X9050A1V1E3
|
Vishay Semiconductor | 完全替代 | Through Hole |
CAP TANT 0.1uF 50V 10% RADIAL
|
||
199D104X9050A1V1E3
|
Vishay Sprague | 完全替代 | Case A |
CAP TANT 0.1uF 50V 10% RADIAL
|
||
MCDTR10M50-1-RH
|
Multicomp | 功能相似 | Through Hole |
MULTICOMP MCDTR10M50-1-RH 钽电容, 10uF 20%容差 50V
|
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