Technical parameters/rated voltage (DC): | 50.0 V |
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Technical parameters/capacitance: | 100 nF |
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Technical parameters/tolerances: | ±20 % |
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Technical parameters/rated voltage: | 50 V |
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Encapsulation parameters/installation method: | Through Hole |
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Physical parameters/medium materials: | Tantalum |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D104X0035A1V1E3
|
Vishay Semiconductor | 功能相似 | Radial |
Cap Tant Solid 0.1uF 35V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ Bulk
|
||
199D104X0035A2B1E3
|
Vishay Semiconductor | 功能相似 | Through Hole |
Cap Tant Solid 0.1uF 35V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ T/R
|
||
199D104X0035A2B1E3
|
Vishay Sprague | 功能相似 | Through Hole |
Cap Tant Solid 0.1uF 35V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ T/R
|
||
199D104X9050A1V1E3
|
Vishay Semiconductor | 类似代替 | Through Hole |
VISHAY 199D104X9050A1V1E3 钽电容, 0.1uF, 50V, 径向引线
|
||
199D104X9050A1V1E3
|
Vishay Sprague | 类似代替 | Case A |
VISHAY 199D104X9050A1V1E3 钽电容, 0.1uF, 50V, 径向引线
|
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