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Model SI1315DL-T1-GE3

Description VISHAY SI1315DL-T1-GE3 晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV

Brand: Vishay Semiconductor

Packaging SOT-323

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(6080) Minimum order quantity(1)

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.28 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	400 mW
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	112pF @4V(Vds)
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-50 ℃
Technical parameters/dissipated power (Max):	0.4 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-323
Dimensions/Length:	2.2 mm
Dimensions/Width:	1.35 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-323
Physical parameters/operating temperature:	-50℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

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