Technical parameters/breakdown voltage: | -40.0 V|40 V |
|
Technical parameters/drain source resistance: | 50 Ω |
|
Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Leakage source breakdown voltage: | 40 V |
|
Technical parameters/breakdown voltage of gate source: | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 6pF @10V(Vgs) |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ201
|
Fairchild | 功能相似 | SOT-23-3 |
ON Semiconductor MMBFJ201 N通道 JFET 晶体管, Idss: 0.3 → 1.5mA, 3引脚 SOT-23封装
|
||
MMBFJ202
|
ON Semiconductor | 功能相似 | SOT-23-3 |
MMBFJ202 系列 40 V 4.5 mA N 沟道 通用 放大器 - SOT-23
|
||
MMBFJ202
|
Fairchild | 功能相似 | SOT-23-3 |
MMBFJ202 系列 40 V 4.5 mA N 沟道 通用 放大器 - SOT-23
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review