Technical parameters/dissipated power: | 2.5W (Ta), 42W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Input capacitance (Ciss): | 490pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 42W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR120
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRLR120
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRLR120NPBF
|
Infineon | 功能相似 | TO-252-3 |
N沟道 100V 10A
|
||
IRLR120NTRLPBF
|
Infineon | 功能相似 | TO-252-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
|
||
IRLR120NTRLPBF
|
International Rectifier | 功能相似 | TO-252-3 |
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; D-Pak (TO-252AA); PD 48W
|
||
IRLR120NTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INTERNATIONAL RECTIFIER IRLR120NTRPBF 场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
|
||
IRLR120PBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRLR120PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRLR120PBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRLR120TRRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK T/R
|
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