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Specification parameters
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Technical parameters/rated power:

110 W

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.0071 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

110 W

Technical parameters/threshold voltage:

2 V

Technical parameters/Input capacitance:

2290 pF

Technical parameters/drain source voltage (Vds):

60 V

Technical parameters/Continuous drain current (Ids):

79A

Technical parameters/rise time:

35 ns

Technical parameters/Input capacitance (Ciss):

2290pF @50V(Vds)

Technical parameters/rated power (Max):

110 W

Technical parameters/descent time:

46 ns

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

110W (Tc)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-252-3

Dimensions/Length:

6.73 mm

Dimensions/Width:

6.22 mm

Dimensions/Height:

2.39 mm

Dimensions/Packaging:

TO-252-3

Physical parameters/materials:

Silicon

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Other/Manufacturing Applications:

Battery Operated Drive

Compliant with standards/RoHS standards:

Compliant with standards/lead standards

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
AUIRFR1018ETRL	International Rectifier	类似代替	TO-252-3	DPAK N-CH 60V 79A	PDF
IRFR1018EPBF	Infineon	类似代替	TO-252-3	INFINEON IRFR1018EPBF 晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V	PDF
STD60N55F3	ST Microelectronics	功能相似	TO-252-3	N 通道 STripFET™ F3，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics	PDF
STD70N6F3	ST Microelectronics	功能相似	TO-252-3	STD70N6F3 系列 60 V 10.5 mOhm N 沟道 STripFET™ III 功率 MOSFET - TO-252

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643