Technical parameters/bandwidth: | 1.4 MHz |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/gain bandwidth: | 1.4 MHz |
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Technical parameters/power supply voltage: | 4.75V ~ 15.5V |
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Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | DIP |
|
Dimensions/Packaging: | DIP |
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Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Each |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LMC662AIN/NOPB
|
National Semiconductor | 功能相似 | PDIP |
OP Amp Dual GP R-R O/P 15.5V 8Pin PDIP Rail
|
||
|
|
National Semiconductor | 类似代替 | DIP |
CMOS双路运算放大器 CMOS Dual Operational Amplifier
|
||
LMC662CN
|
TI | 类似代替 | DIP-8 |
CMOS双路运算放大器 CMOS Dual Operational Amplifier
|
||
LMC662EN
|
National Semiconductor | 功能相似 | DIP |
运算放大器 LMC662EN MDIP-8
|
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