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Technical parameters/power supply voltage (DC): | 5.00 V |
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Technical parameters/output current: | 22mA @5V |
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Technical parameters/power supply current: | 750 µA |
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Technical parameters/number of circuits: | 2 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/input compensation drift: | 1.30 µV/K |
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Technical parameters/bandwidth: | 1.4 MHz |
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Technical parameters/conversion rate: | 1.10 V/μs |
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Technical parameters/gain bandwidth product: | 1.4 MHz |
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Technical parameters/input compensation voltage: | 1 mV |
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Technical parameters/input bias current: | 0.002 pA |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/gain bandwidth: | 1.4 MHz |
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Technical parameters/Common Mode Rejection Ratio (Min): | 63 dB |
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Technical parameters/power supply voltage: | 4.75V ~ 15.5V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | DIP-8 |
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Dimensions/Packaging: | DIP-8 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LMC662AIN
|
National Semiconductor | 类似代替 | DIP |
CMOS双路运算放大器 CMOS Dual Operational Amplifier
|
||
LMC662AIN/NOPB
|
National Semiconductor | 功能相似 | PDIP |
OP Amp Dual GP R-R O/P 15.5V 8Pin PDIP Rail
|
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