Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 5.8A |
|
Technical parameters/rise time: | 10 ns |
|
Technical parameters/descent time: | 24 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SO-8 |
|
Dimensions/Length: | 4.9 mm |
|
Dimensions/Width: | 3.9 mm |
|
Dimensions/Height: | 1.75 mm |
|
Dimensions/Packaging: | SO-8 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9926A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9926A 双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
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||
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|
Kexin | 功能相似 | SOP-8 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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SI4435DY
|
Freescale | 功能相似 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
|
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Vishay Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
|
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