Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 330 W |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Continuous drain current (Ids): | 280A |
|
Technical parameters/rise time: | 120 ns |
|
Technical parameters/Input capacitance (Ciss): | 6450pF @25V(Vds) |
|
Technical parameters/descent time: | 130 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 330000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | D2PAK-263 |
|
Dimensions/Packaging: | D2PAK-263 |
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Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF2804SPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRF2804SPBF 晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
|
||
IRF2804SPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF2804SPBF 晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
|
||
IRF2804SPBF
|
IRF | 功能相似 |
INFINEON IRF2804SPBF 晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
|
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