Technical parameters/dissipated power: | 150000 mW |
|
Technical parameters/rise time: | 73 ns |
|
Technical parameters/Input capacitance (Ciss): | 1400pF @25V(Vds) |
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Technical parameters/descent time: | 57 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 150W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Samsung | 功能相似 | SFM |
19A , 100V , 0.200欧姆,P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
||
IRF9540
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
19A , 100V , 0.200欧姆,P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
||
IRF9540
|
International Rectifier | 功能相似 | TO-220 |
19A , 100V , 0.200欧姆,P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
||
IRF9540PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9540PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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