Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -19.0 A
Technical parameters/drain source resistance: 200 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): -100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -19.0 A
Technical parameters/rise time: 73 ns
Technical parameters/descent time: 57 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Samsung | 功能相似 | SFM |
19A , 100V , 0.200欧姆,P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
||
IRF9540
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
19A , 100V , 0.200欧姆,P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
||
IRF9540
|
International Rectifier | 功能相似 | TO-220 |
19A , 100V , 0.200欧姆,P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
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