Technical parameters/drain source resistance: | 39 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3 W |
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Technical parameters/product series: | IRFR3410 |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/Input capacitance: | 1690pF @25V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Input capacitance (Ciss): | 1690pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3410PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR3410PBF 晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
|
||
IRFR3410TRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR3410TRPBF 晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V
|
||
IRFR3410TRRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
DPAK N-CH 100V 31A
|
||
STD25NF10T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD25NF10T4 晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
|
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