Technical parameters/rated voltage (DC): | 100 V |
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Technical parameters/rated current: | 31.0 A |
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Technical parameters/drain source resistance: | 39 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3 W |
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Technical parameters/product series: | IRFR3410 |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/Continuous drain current (Ids): | 31.0 A |
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Technical parameters/rise time: | 27.0 ns |
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Technical parameters/Input capacitance (Ciss): | 1690pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD25NF10T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD25NF10T4 晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
|
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