Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -16.0 A |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 150 W |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/minimum current amplification factor (hFE): | 1000 @10A, 3V |
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Technical parameters/rated power (Max): | 150 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | TO-3 |
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Dimensions/Length: | 39.5 mm |
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Dimensions/Width: | 26.2 mm |
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Dimensions/Height: | 8.7 mm |
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Dimensions/Packaging: | TO-3 |
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Physical parameters/operating temperature: | 200℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJ11015G
|
ON Semiconductor | 功能相似 | TO-204-2 |
PNP 复合晶体管，On Semiconductor 这些 ON Semiconductor 复合晶体管是包含两个双极性晶体管（集成或分离设备）的复合结构。 这些设备连接，因此第二个晶体管进一步放大由第一个晶体管放大的电流。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
|
||
MJ11033
|
Wings | 功能相似 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
|||
MJ11033
|
ON Semiconductor | 功能相似 | TO-204-2 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
||
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR MJ11033G. 达林顿双极晶体管
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Motorola | 功能相似 |
ON SEMICONDUCTOR MJ11033G. 达林顿双极晶体管
|
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