Technical parameters/rated voltage (DC): -120 V
Technical parameters/rated current: -50.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 50A
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/Maximum current amplification factor (hFE): 18000
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/packaging: TO-204-2
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Other/Minimum Packaging: 100
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJ11015G
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ON Semiconductor | 类似代替 | TO-204-2 |
PNP 复合晶体管，On Semiconductor 这些 ON Semiconductor 复合晶体管是包含两个双极性晶体管（集成或分离设备）的复合结构。 这些设备连接，因此第二个晶体管进一步放大由第一个晶体管放大的电流。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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Motorola | 类似代替 |
ON SEMICONDUCTOR MJ11033G. 达林顿双极晶体管
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Motorola | 类似代替 |
ON SEMICONDUCTOR MJ11033G. 达林顿双极晶体管
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