Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @10mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/DC current gain (hFE): | 50 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 5.2 mm |
|
Dimensions/Width: | 4.19 mm |
|
Dimensions/Height: | 5.33 mm |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Manufacturing Applications: | Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP44BU
|
Fairchild | 类似代替 | TO-226-3 |
ON Semiconductor KSP44BU , NPN 晶体管, 300 mA, Vce=400 V, HFE:40, 3引脚 TO-92封装
|
||
KSP44TA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSP44TA 单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 50 hFE
|
||
KSP44TA
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR KSP44TA 单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 50 hFE
|
||
KSP44TF
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor KSP44TF , NPN 晶体管, 300 mA, Vce=400 V, HFE:40, 1 MHz, 3引脚 TO-92封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review