Technical parameters/rated voltage (DC): | -25.0 V |
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Technical parameters/rated current: | -5.00 A |
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Technical parameters/polarity: | PNP |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 5A |
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Technical parameters/minimum current amplification factor (hFE): | 45 @2A, 1V |
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Technical parameters/rated power (Max): | 15 W |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-126-3 |
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Dimensions/Packaging: | TO-126-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Motorola | 类似代替 | 3 |
互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
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Samsung | 类似代替 |
互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
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MJE210
|
Fairchild | 类似代替 |
互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
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MJE210
|
ST Microelectronics | 类似代替 | TO-126-3 |
互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
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|
|
Central Semiconductor | 类似代替 |
互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
|
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MJE210G
|
ON Semiconductor | 功能相似 | TO-225-3 |
ON SEMICONDUCTOR MJE210G 单晶体管 双极, PNP, -40 V, 65 MHz, 15 W, -5 A, 10 hFE 新
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