Technical parameters/frequency: | 65 MHz |
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Technical parameters/rated voltage (DC): | -25.0 V |
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Technical parameters/rated current: | -5.00 A |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | PNP, P-Channel |
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Technical parameters/dissipated power: | 15 W |
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Technical parameters/gain bandwidth product: | 65 MHz |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/thermal resistance: | 8.34℃/W (RθJC) |
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Technical parameters/Maximum allowable collector current: | 5A |
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Technical parameters/minimum current amplification factor (hFE): | 45 @2A, 1V |
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Technical parameters/rated power (Max): | 15 W |
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Technical parameters/DC current gain (hFE): | 65 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 15000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-225-3 |
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Dimensions/Length: | 7.8 mm |
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Dimensions/Width: | 2.66 mm |
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Dimensions/Height: | 11.04 mm |
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Dimensions/Packaging: | TO-225-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Other/Manufacturing Applications: | Industrial, Audio, Industrial, Power Management, Audio, Power Management |
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Compliant with standards/RoHS standards: | RoH Alternative material
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