Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 8.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 20 W |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 8A |
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Technical parameters/minimum current amplification factor (hFE): | 1000 |
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Technical parameters/maximum current amplification factor (hFE): | 12000 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Other/Minimum Packaging: | 2500 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH122
|
Samsung | 功能相似 |
FAIRCHILD SEMICONDUCTOR KSH122 单晶体管 双极, 通用, NPN, 100 V, 20 W, 8 A, 1000 hFE
|
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MJD122T4
|
ON Semiconductor | 功能相似 | TO-252-3 |
NPN 复合晶体管，STMicroelectronics ### 双极晶体管，STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管，包括通用、达林顿、功率和高电压设备，采用表面安装和通孔封装。
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