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Model MJD122T4
Description 互补达林顿功率晶体管 Complementary Darlington Power Transistor
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
1.53  yuan 1.53yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4897) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

8.00 A

 

Technical parameters/dissipated power:

20 W

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/minimum current amplification factor (hFE):

1000 @4A, 4V

 

Technical parameters/rated power (Max):

1.75 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/gain bandwidth:

4MHz (Min)

 

Technical parameters/dissipated power (Max):

1750 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.38 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

Customs information/ECCN code:

EAR99

 

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