Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @100mA, 1V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA05RA
|
ON Semiconductor | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR MPSA05RA 单晶体管 双极, NPN, 60 V, 100 MHz, 625 mW, 500 mA, 100 hFE
|
||
MPSA05_D26Z
|
ON Semiconductor | 完全替代 | TO-226-3 |
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 T/R
|
||
MPSA05_D26Z
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 T/R
|
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