Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA05RA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR MPSA05RA 单晶体管 双极, NPN, 60 V, 100 MHz, 625 mW, 500 mA, 100 hFE
|
||
|
|
Fairchild | 功能相似 | TO-92 |
NPN Medium Power Transistor
|
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