Technical parameters/rated voltage (DC): | 55.0 V |
|
Technical parameters/rated current: | 110 A |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 200 W |
|
Technical parameters/product series: | IRF3205S |
|
Technical parameters/Input capacitance: | 3.25 nF |
|
Technical parameters/gate charge: | 146 nC |
|
Technical parameters/drain source voltage (Vds): | 55.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 55.0 V |
|
Technical parameters/Continuous drain current (Ids): | 110 A |
|
Technical parameters/rise time: | 101 ns |
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Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | D2PAK-263 |
|
Dimensions/Packaging: | D2PAK-263 |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3205SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF3205SPBF 晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
|
||
IRF3205STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF3205STRLPBF 晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
|
||
IRF3205STRRPBF
|
International Rectifier | 功能相似 | D2PAK-3 |
场效应管(MOSFET) IRF3205STRRPBF D2PAK
|
||
STB150NF55T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB150NF55T4 晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 4 V
|
||
STB60NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
|
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