Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 75.0 A |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.8 W |
|
Technical parameters/product series: | IRFS4710 |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/Continuous drain current (Ids): | 75.0 A |
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Technical parameters/rise time: | 130 ns |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | D2PAK |
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Dimensions/Packaging: | D2PAK |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75645S3ST
|
ON Semiconductor | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR HUF75645S3ST 场效应管, MOSFET, N沟道, 100V, 75mA
|
||
HUF75645S3ST
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR HUF75645S3ST 场效应管, MOSFET, N沟道, 100V, 75mA
|
||
STB120NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB120NF10T4 晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
|
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