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Model HUF75645S3ST

Description ON Semiconductor UltraFET 系列 Si N沟道 MOSFET HUF75645S3ST, 75 A, Vds=100 V, 3引脚 D2PAK (TO-263)封装

Brand: ON Semiconductor

Packaging TO-263-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.0115 Ω
Technical parameters/dissipated power:	310 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/rise time:	117 ns
Technical parameters/Input capacitance (Ciss):	3790pF @25V(Vds)
Technical parameters/rated power (Max):	310 W
Technical parameters/descent time:	97 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	310 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	4.83 mm
Dimensions/Height:	11.33 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
HUF75645S3S	Freescale	功能相似		75A ， 100V ， 0.014 Ohm的N通道， UltraFET功率MOSFET 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs	PDF
HUF75645S3S	Fairchild	功能相似	TO-263-3	75A ， 100V ， 0.014 Ohm的N通道， UltraFET功率MOSFET 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs	PDF
HUF75645S3ST_NL	Freescale	功能相似		N沟道 100V 75A
HUF75645S3ST_NL	Fairchild	功能相似	D2PAK	N沟道 100V 75A
STB120NF10T4	ST Microelectronics	功能相似	TO-263-3	STMICROELECTRONICS STB120NF10T4 晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V	PDF