Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @150mA, 10V |
|
Technical parameters/rated power (Max): | 800 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 800 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-205 |
|
Dimensions/Packaging: | TO-205 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2218A
|
Motorola | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
|
|
Microsemi | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
2N2218A
|
Infineon | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
2N2218A
|
CDIL | 功能相似 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
|||
|
|
Central Semiconductor | 功能相似 | TO-39 |
TO-39 NPN 40V 0.8A
|
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