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Model NTD4965N-1G
Description 功率MOSFET的30 V ， 68 A单N +通道， DPAK / IPAK Power MOSFET 30 V, 68 A, Single N?Channel, DPAK/IPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-251
Delivery time
Packaging method Tube
Standard packaging quantity 1
0.67  yuan 0.67yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7343) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

2.6 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

17.8A

 

Technical parameters/rise time:

34.2 ns

 

Technical parameters/Input capacitance (Ciss):

1710pF @15V(Vds)

 

Technical parameters/descent time:

14.2 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2600 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-251

 

Dimensions/Packaging:

TO-251

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD4963N-35G NTD4963N-35G ON Semiconductor 功能相似 TO-251-3
ON SEMICONDUCTOR NTD4963N-35G 晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0082 ohm, 10 V, 1.45 V
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