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Model VNB35N07TR-E
Description STMICROELECTRONICS VNB35N07TR-E 晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
Product QR code
Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
25.98  yuan 25.98yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8864) Minimum order quantity(1)
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Technical parameters/number of output interfaces:

1

 

Technical parameters/output current:

35 A

 

Technical parameters/power supply current:

0.25 mA

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.028 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

125 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

80 V

 

Technical parameters/Continuous drain current (Ids):

18.0 A

 

Technical parameters/Input voltage (Max):

18 V

 

Technical parameters/output current (Max):

25 A

 

Technical parameters/output current (Min):

25 A

 

Technical parameters/number of inputs:

1

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/dissipated power (Max):

125000 mW

 

Technical parameters/input voltage:

18 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.2 mm

 

Dimensions/Width:

9.15 mm

 

Dimensions/Packaging:

TO-263-3

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Automotive, Power Management, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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