Technical parameters/operating voltage: | 36.0V (max) |
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Technical parameters/rated power: | 3.1 W |
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Technical parameters/number of output interfaces: | 1 |
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Technical parameters/Input voltage (DC): | 5.50 V |
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Technical parameters/output current: | 6 A |
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Technical parameters/drain source resistance: | 0.025 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.1 W |
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Technical parameters/product series: | IPS1021S |
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Technical parameters/Continuous drain current (Ids): | 6.00 A |
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Technical parameters/output current (Max): | 4.8 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 4.5 V |
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Technical parameters/input voltage: | 4.5V ~ 5.5V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VNB35N07TR-E
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS VNB35N07TR-E 晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
|
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