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Model MRF8S9220HR3
Description Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960MHz, 65W Avg., 28V
Product QR code
Brand: NXP
Packaging NI-780H-2L
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
638.48  yuan 638.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2088) Minimum order quantity(1)
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Technical parameters/frequency:

960 MHz

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/output power:

65 W

 

Technical parameters/gain:

19.4 dB

 

Technical parameters/test current:

1.6 A

 

Technical parameters/operating temperature (Max):

225 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/rated voltage:

70 V

 

Encapsulation parameters/installation method:

Screw

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

NI-780H-2L

 

Dimensions/Height:

4.32 mm

 

Dimensions/Packaging:

NI-780H-2L

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF8S9100HR3 MRF8S9100HR3 NXP 类似代替 NI-780H-2L
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960MHz, 72W CW, 28V
PDF
MRFE6P3300HR3 MRFE6P3300HR3 Freescale 功能相似 NI-860C3
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
PDF
MRFE6P3300HR3 MRFE6P3300HR3 NXP 功能相似 NI-860C3
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
PDF

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