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Model NTB45N06L

Description 45安培， 60伏特，逻辑电平， N沟道TO- 220和D2PAK 45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK

Brand: ON Semiconductor

Packaging D2PAK-263

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	45.0 A
Technical parameters/drain source resistance:	28.0 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	125 W
Technical parameters/threshold voltage:	2 V
Technical parameters/Input capacitance:	1.72 nF
Technical parameters/gate charge:	46.0 nC
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60.0 V
Technical parameters/breakdown voltage of gate source:	±15.0 V
Technical parameters/Continuous drain current (Ids):	45.0 A
Technical parameters/rise time:	341 ns
Technical parameters/Input capacitance (Ciss):	1212pF @25V(Vds)
Technical parameters/descent time:	158 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	125000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	D2PAK-263
Dimensions/Packaging:	D2PAK-263
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Other/Minimum Packaging:	800
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

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