Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 45.0 A |
|
Technical parameters/drain source resistance: | 26.0 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 125 W |
|
Technical parameters/drain source voltage (Vds): | 60.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 60.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 45.0 A |
|
Technical parameters/rise time: | 101 ns |
|
Technical parameters/Input capacitance (Ciss): | 1224pF @25V(Vds) |
|
Technical parameters/descent time: | 106 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 125000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | D2PAK-263 |
|
Dimensions/Packaging: | D2PAK-263 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB45N06
|
ON Semiconductor | 类似代替 | D2PAK-263 |
60V,45A,N沟道功率MOSFET
|
||
NTB45N06T4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON SEMICONDUCTOR NTB45N06T4G MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V 新
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review