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Model IPB091N06NG
Description OptiMOS Three Power Transistor
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8161) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

60.0 V

 

Technical parameters/rated current:

80.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

8.8 Ω

 

Technical parameters/dissipated power:

188 W

 

Technical parameters/Input capacitance:

2.80 nF

 

Technical parameters/gate charge:

81.0 nC

 

Technical parameters/drain source voltage (Vds):

60.0 V

 

Technical parameters/Leakage source breakdown voltage:

60 V

 

Technical parameters/Continuous drain current (Ids):

80.0 A

 

Technical parameters/rise time:

29 ns

 

Technical parameters/descent time:

28 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10 mm

 

Dimensions/Width:

9.25 mm

 

Dimensions/Height:

4.4 mm

 

Dimensions/Packaging:

TO-263-3

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NP80N06MLG-S18-AY NP80N06MLG-S18-AY Renesas Electronics 功能相似 TO-220-3
MOS场效应 MOS FIELD EFFECT TRANSISTOR
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