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Model NP80N06MLG-S18-AY
Description MOSField Effect MOS Field Effect Transistor
Product QR code
Brand: Renesas Electronics
Packaging TO-220-3
Delivery time
Packaging method Tube, Rail
Standard packaging quantity 1
6.78  yuan 6.78yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5923) Minimum order quantity(1)
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Technical parameters/dissipated power:

1.8W (Ta), 115W (Tc)

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/rise time:

13 ns

 

Technical parameters/Input capacitance (Ciss):

6900pF @25V(Vds)

 

Technical parameters/descent time:

7 ns

 

Technical parameters/dissipated power (Max):

1.8W (Ta), 115W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube, Rail

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP60N55F3 STP60N55F3 ST Microelectronics 功能相似 TO-220-3
N沟道55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO- 220 / FP的STripFET TM功率MOSFET N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET
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