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Model PBRP123YT
Description Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
Product QR code
Brand: Nexperia
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
1.52  yuan 1.52yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8556) Minimum order quantity(1)
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Technical parameters/minimum current amplification factor (hFE):

230

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

570 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.4 mm

 

Dimensions/Height:

1.1 mm

 

Dimensions/Packaging:

SOT-23

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBRP123ET,215 PBRP123ET,215 NXP 功能相似 SOT-23-3
TO-236AB PNP 40V 600mA
PDF
PBRP123ET,215 PBRP123ET,215 Nexperia 功能相似 SOT-23-3
TO-236AB PNP 40V 600mA
PDF
PBRP123YT,215 PBRP123YT,215 Nexperia 功能相似 SOT-23-3
晶体管 双极预偏置/数字, 单路PNP, -40 V, -800 mA, 2.2 kohm, 10 kohm
PDF
PBRP123YT,215 PBRP123YT,215 NXP 功能相似 SOT-23-3
晶体管 双极预偏置/数字, 单路PNP, -40 V, -800 mA, 2.2 kohm, 10 kohm
PDF

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