Technical parameters/polarity: | PNP |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Encapsulation parameters/Encapsulation: | SPT |
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Dimensions/Packaging: | SPT |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NXP | 功能相似 | SPT |
100V, 1A PNP low VCEsat (BISS) transistor
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Philips | 功能相似 |
100V, 1A PNP low VCEsat (BISS) transistor
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