Technical parameters/power supply voltage (DC): | 5.00 V, 6.00 V (max) |
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Technical parameters/clock frequency: | 100kHz (max) |
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Technical parameters/access time: | 100 ms |
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Technical parameters/memory capacity: | 2000 B |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | DIP |
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Dimensions/Packaging: | DIP |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 功能相似 | DIP |
256X8 STANDARD SRAM, PDIP8
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Intersil | 功能相似 | DIP |
256X8 STANDARD SRAM, PDIP8
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||
PCF8570P
|
NXP | 功能相似 | DIP |
256 ×8位的静态低电压内存与I 2 C总线接口 256 x 8-bit static low-voltage RAM with I2C-bus interface
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||
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|
Philips | 功能相似 | DIP |
256 ×8位的静态低电压内存与I 2 C总线接口 256 x 8-bit static low-voltage RAM with I2C-bus interface
|
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