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Model PD57018S
Description RF功率晶体管的LDMOST塑料系列 RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Product QR code
Brand: ST Microelectronics
Packaging PowerSO-10
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7653) Minimum order quantity(1)
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Technical parameters/frequency:

945 MHz

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

31.7 W

 

Technical parameters/Leakage source breakdown voltage:

65.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.50 A

 

Technical parameters/output power:

18 W

 

Technical parameters/gain:

16.5 dB

 

Technical parameters/test current:

100 mA

 

Technical parameters/rated voltage:

65 V

 

Encapsulation parameters/Encapsulation:

PowerSO-10

 

Dimensions/Packaging:

PowerSO-10

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PD57018 PD57018 ETC1 类似代替
RF功率晶体管的LDMOST塑料系列 RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PDF
PD57018S-E PD57018S-E ST Microelectronics 功能相似 PowerSO-10RF-2
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
PDF

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