Technical parameters/frequency: 945 MHz
Technical parameters/rated voltage (DC): 65.0 V
Technical parameters/rated current: 2.5 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 760 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 31.7 W
Technical parameters/drain source voltage (Vds): 65.0 V
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/output power: 18 W
Technical parameters/gain: 16.5 dB
Technical parameters/test current: 100 mA
Technical parameters/Input capacitance (Ciss): 34.5pF @28V(Vds)
Technical parameters/operating temperature (Max): 165 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 31700 mW
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerSO-10RF-2
External dimensions/packaging: PowerSO-10RF-2
Physical parameters/operating temperature: -65℃ ~ 165℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD57018STR-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF |
RF功率晶体管， LDMOST塑料家族的N沟道增强模式，横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
|
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