Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 0.35A |
|
Encapsulation parameters/Encapsulation: | SC-73 |
|
Dimensions/Packaging: | SC-73 |
|
Other/Product Lifecycle: | Unknown |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
BSP297 N沟道MOSFET 200V 650mA/0.65A SOT-223/SC-73/TO261-4 marking/标记 BSP297 射频应用
|
||
BSP297
|
Siemens AG | 功能相似 |
BSP297 N沟道MOSFET 200V 650mA/0.65A SOT-223/SC-73/TO261-4 marking/标记 BSP297 射频应用
|
|||
BSP297
|
Infineon | 功能相似 | SOT-223 |
BSP297 N沟道MOSFET 200V 650mA/0.65A SOT-223/SC-73/TO261-4 marking/标记 BSP297 射频应用
|
||
PHD9NQ20T
|
NXP | 功能相似 | DPAK |
N-channel TrenchMOS™ transistor
|
||
|
|
Philips | 功能相似 |
N-channel TrenchMOS™ transistor
|
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