Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 400 V |
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Technical parameters/Maximum allowable collector current: | 12A |
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Technical parameters/minimum current amplification factor (hFE): | 8 @5A, 5V |
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Technical parameters/rated power (Max): | 80 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 80000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Rail |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJP13009
|
Fairchild | 功能相似 | TO-220-3 |
高压开关模式的应用 High Voltage Switch Mode Application
|
||
|
|
ON Semiconductor | 功能相似 | TO-220-3 |
高压开关模式的应用 High Voltage Switch Mode Application
|
||
MJE13009G
|
ON Semiconductor | 功能相似 | TO-220-3 |
12安培NPN硅功率晶体管400伏 - 100瓦 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
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