Technical parameters/frequency: 4 MHz
Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 12.0 A
Technical parameters/rated power: 100 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 100 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 8
Technical parameters/Maximum current amplification factor (hFE): 40
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 100000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.82 mm
External dimensions/height: 9.28 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
KEC | 类似代替 | TO-220 |
硅NPN开关晶体管 SILICON NPN SWITCHING TRANSISTOR
|
||
MJE13009
|
UTC | 类似代替 | TO-220 |
硅NPN开关晶体管 SILICON NPN SWITCHING TRANSISTOR
|
||
MJE13009
|
Freescale | 类似代替 |
硅NPN开关晶体管 SILICON NPN SWITCHING TRANSISTOR
|
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