Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 1.8 W |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/Continuous drain current (Ids): | 10.7A |
|
Technical parameters/rise time: | 65 ns |
|
Technical parameters/Input capacitance (Ciss): | 1400pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 8.3 W |
|
Technical parameters/descent time: | 70 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.8W (Ta), 8.3W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL4105PBF
|
International Rectifier | 功能相似 | TO-261-4 |
INFINEON IRFL4105PBF 晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V
|
||
IRFL4105PBF
|
Infineon | 功能相似 | TO-261-4 |
INFINEON IRFL4105PBF 晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V
|
||
PHT8N06LT,135
|
NXP | 类似代替 | TO-261-4 |
Trans MOSFET N-CH 55V 3.5A 4Pin(3+Tab) SC-73 T/R
|
||
|
|
Nexperia | 类似代替 | SOT-223-3 |
Trans MOSFET N-CH 55V 3.5A 4Pin(3+Tab) SC-73 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review